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Freitas, R.R., et al. (2015) Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation. The Journal of Physical Chemistry C, 119, 23599-23606.
https://doi.org/10.1021/acs.jpcc.5b07961

has been cited by the following article:

• TITLE: First-Principle Studies on the Ga and As Doping of Germanane Monolayer

  AUTHORS: Lei Liu, Yanju Ji, Yifan Liu, Liqiang Liu

  KEYWORDS: Germanane, Doping, Electronic Properties, Optical Properties, First-Principle

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.7 No.1, January 11, 2019

  ABSTRACT: The study of energetics, structural, the electronic and optical properties of Ga and As atoms substituted for doped germanane monolayers were studied by first-principles calculations based on density functional theory. Both of the two doping are thermodynamically stable. According to the band structure and partial density of the states, gallium is p-type doping. Impurity bands below the conduction band lead the absorption spectrum moves in the infrared direction. Arsenic doping has impurity level passing through the Fermi level and is n-type doping. The analysis of optical properties confirms the value of bandgap and doping properties.