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Mak, K.F., Lee, C., Hone, J., Shan, J. and Heinz, T.F. (2010) Atomically Thin MoS2: A New Direct-Gap Semiconductor. Physical Review Letters, 105, Article ID: 136805.
https://doi.org/10.1103/PhysRevLett.105.136805

has been cited by the following article:

• TITLE: First-Principle Studies on the Ga and As Doping of Germanane Monolayer

  AUTHORS: Lei Liu, Yanju Ji, Yifan Liu, Liqiang Liu

  KEYWORDS: Germanane, Doping, Electronic Properties, Optical Properties, First-Principle

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.7 No.1, January 11, 2019

  ABSTRACT: The study of energetics, structural, the electronic and optical properties of Ga and As atoms substituted for doped germanane monolayers were studied by first-principles calculations based on density functional theory. Both of the two doping are thermodynamically stable. According to the band structure and partial density of the states, gallium is p-type doping. Impurity bands below the conduction band lead the absorption spectrum moves in the infrared direction. Arsenic doping has impurity level passing through the Fermi level and is n-type doping. The analysis of optical properties confirms the value of bandgap and doping properties.