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Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, I.V. and Kis, A. (2011) Single-Layer MoS2 Transistors. Nature Nanotechnology, 6, 147.
https://doi.org/10.1038/nnano.2010.279

has been cited by the following article:

• TITLE: First-Principle Studies on the Ga and As Doping of Germanane Monolayer

  AUTHORS: Lei Liu, Yanju Ji, Yifan Liu, Liqiang Liu

  KEYWORDS: Germanane, Doping, Electronic Properties, Optical Properties, First-Principle

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.7 No.1, January 11, 2019

  ABSTRACT: The study of energetics, structural, the electronic and optical properties of Ga and As atoms substituted for doped germanane monolayers were studied by first-principles calculations based on density functional theory. Both of the two doping are thermodynamically stable. According to the band structure and partial density of the states, gallium is p-type doping. Impurity bands below the conduction band lead the absorption spectrum moves in the infrared direction. Arsenic doping has impurity level passing through the Fermi level and is n-type doping. The analysis of optical properties confirms the value of bandgap and doping properties.