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Iye, Y., et al. (1998) Materials Science and Engineering: B, 63, 88-95.
https://doi.org/10.1016/S0921-5107(99)00057-4

has been cited by the following article:

• TITLE: Carrier-Induced Magnetic Solitons and Metal-Insulator Transition in Diluted Magnetic Semiconductors Ga1-xMnxAs

  AUTHORS: I. Kanazawa, S. Nakamura, R. Maeda

  KEYWORDS: Diluted Magnetic Semiconductor, Magnetic Soliton, Metal-Insulator Transition, Localization

  JOURNAL NAME: Journal of Modern Physics, Vol.9 No.14, December 14, 2018

  ABSTRACT: We discuss hole-induced magnetic solitons and metal-insulator transition of transport properties in diluted magnetic semiconductors Ga1-xMnxAs from the standpoint of a field theoretical formulation, and analyze experimental data of transport properties, using the supersymmetry sigma formula and the effective Lagrangian of diffusion model.