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Campbell, S.A., Gilmer, D.C., Wang, X.-C., Hsieh, M.-T., Kim, H.-S., Gladfelter, W.L. and Yan, J. (1997) MOSFET Transistors Fabricated with High Permitivity TiO2 Dielectrics. IEEE Transactions on Electron Devices, 44, 104-109.
https://doi.org/10.1109/16.554800

has been cited by the following article:

• TITLE: Unique Pulsed-Laser Deposition Production of Anatase and Rutile TiO2 on Al2O3

  AUTHORS: Alexandra Gordienko, Anthony B. Kaye

  KEYWORDS: Titania, Anatase, Rutile, Sapphire, PLD

  JOURNAL NAME: Crystal Structure Theory and Applications, Vol.7 No.2, May 31, 2018

  ABSTRACT: Two pure hexagonal phases of titanium dioxide, anatase and rutile, were grown on c-cut Al2O3 substrates via pulsed-laser deposition by changing only the growth and annealing conditions, but without changing the substrate, target, or working gas. Purity of each phase was confirmed by x-ray diffraction, the quality of each film was studied using atomic force microscopy and scanning electron microscopy, and the interface between each substrate and film was studied using x-ray photoelectron spectroscopy. A binding layer of Ti2O3 was found to explain anatase growth under the very large lattice mismatch conditions.