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Xie, Q., Deduytsche, D., Schaekers, M., Caymax, M., Delabie, A., Qu, X.-P. and Detavernier, C. (2010) Implementing TiO2 as Gate Dielectric for Ge-Channel Complementary Metaloxide-Semiconductor Devices by Using HfO2/GeO2 Interlayer. Applied Physics Letters, 97, Article ID: 112095.
https://doi.org/10.1063/1.3490710

has been cited by the following article:

• TITLE: Unique Pulsed-Laser Deposition Production of Anatase and Rutile TiO2 on Al2O3

  AUTHORS: Alexandra Gordienko, Anthony B. Kaye

  KEYWORDS: Titania, Anatase, Rutile, Sapphire, PLD

  JOURNAL NAME: Crystal Structure Theory and Applications, Vol.7 No.2, May 31, 2018

  ABSTRACT: Two pure hexagonal phases of titanium dioxide, anatase and rutile, were grown on c-cut Al2O3 substrates via pulsed-laser deposition by changing only the growth and annealing conditions, but without changing the substrate, target, or working gas. Purity of each phase was confirmed by x-ray diffraction, the quality of each film was studied using atomic force microscopy and scanning electron microscopy, and the interface between each substrate and film was studied using x-ray photoelectron spectroscopy. A binding layer of Ti2O3 was found to explain anatase growth under the very large lattice mismatch conditions.