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Mine, T., Yanagi, H., Nomura, K., Kamiya, T., Hirano, M. and Hosono, H. (2008) Control of Carrier Concentration and Surface Flattening of CuGaO₂ Epitaxial Films for a P-Channel Transparent Transistor. Thin Solid Films, 516, 5790-5794.
https://doi.org/10.1016/j.tsf.2007.10.072

has been cited by the following article:

• TITLE: Preparation of CuGaO2 Thin Film by a Sol-Gel Method Using Two Kinds of Metal Source Combination

  AUTHORS: Takashi Ehara

  KEYWORDS: Transparent Conductive Oxide, Delafossite, CuGaO2, Sol-Gel, Thin Films

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.6 No.8, August 31, 2018

  ABSTRACT: We prepare CuGaO2 thin films on SiO2 substrates by using the sol-gel spin-coating method with two combinations of Cu and a Ga source, Cu and Ga nitrate, or acetylacetonate. X-ray diffraction analysis reveals that the thin films prepared using nitrate sol that are annealed at a temperature of 850°C - 950°C show both c-axis-orientated peaks, (006) and a non-c-axis-oriented peak (012) with similar intensity; little dependence of signal intensity on annealing temperature is also shown. The films are opaque in appearance at these annealing temperatures. Scanning electron microscope observation reveals that the opaque appearance is due to the texture or cracks on the surface of the films. In contrast, the films prepared using acetylacetonate show a (006) peak with higher signal intensity than the (012) peaks. The films show more transparent appearance than that of the films by nitrate. The highest conductivity of the film is 5.7 × 10-4Ω-1·cm-1, obtained in the films by nitrate annealed at 850°C.