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Biswasa, P.K., Dea, A., Pramanika, N.C., Chakraborty, P.K., Ortner, K., Hock, V. and Korder, S. (2003) Effects of Tin on IR Reflectivity, Thermal Emissivity, Hall Mobility and Plasma Wavelength of Sol-Gel Indium tin Oxide Films on Glass. Materials Letters, 57, 2326-2332.
https://doi.org/10.1016/S0167-577X(02)01220-X

has been cited by the following article:

• TITLE: Structural, Electrical and Optical Characteristics of Zn100–xCdxO Thin Films

  AUTHORS: Hend Alkhammash, H. Abd El-Ghanny, M. M. Abd El-Raheem

  KEYWORDS: Zn100–xCdxO, Zinc

  JOURNAL NAME: Open Access Library Journal, Vol.5 No.8, August 20, 2018

  ABSTRACT: Thin films of Zn100-xCdxO with x = 0, 2, 4, 6 and 8 at% were deposited by electron beam evaporation technique on glass substrates. The structural, optical and electrical properties of Zn100-xCdxO films with x = 4 at% have been investigated as a function of annealing temperature. Only zinc and cadmium appeared in the as-deposited films, by annealing their oxides found to exist. It was observed that the optical properties, such as transmittance, reflectance, optical band gap, and refractive index of Zn100-xCdx, were strongly affected by annealing temperature. Other parameters named free carrier concentration, electrical resistivity of the films were studied as a function of annealing temperature for 4 at% CdO content. The figure indicates that the best value of annealing temperature is at 450℃.