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Lu, Y., Cong, G.W., Liu, X.L., Lu, D.C. and Wang, Z.G. (2004) Depth Distribution of the Strain in the GaN Layer with Low-Temperature AlN Interlayer on Si(111) Substrate Studied by Rutherford Backscattering/Channeling. Applied Physics Letters, 85, 5562.
https://doi.org/10.1063/1.1830679
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