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Kim, S., Kondo, Y., Lee, K., Byun, G., Kim, J.J., Lee, S. and Lee, K. (2013) Quantitative Measurement of Strain Field in Strained-Channel-Transistor Arrays by Scanning Moiré Fringe Imaging. Applied Physics Letters, 103, 033523. https://doi.org/10.1063/1.4816286

has been cited by the following article:

• TITLE: Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré

  AUTHORS: Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, Kazuo Ishizuka

  KEYWORDS: STEM Moiré, SiGe, Scanning Transmission Electron Microscopy

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.6 No.7, July 4, 2018

  ABSTRACT: A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.