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Arimoto, K., Watanabe, M., Yamanaka, J., Nakagawa, K., Usami, N., Nakajima, K., Sawano, K. and Shiraki, Y. (2009) Strain Relaxation Mechanisms in Step-Graded Si-Ge/Si(110) Hetero-Structures Grown by Gas-Source MBE at High Temperatures. J. Cryst. Growth, 311, 819-824. https://doi.org/10.1016/j.jcrysgro.2008.09.064

has been cited by the following article:

• TITLE: Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré

  AUTHORS: Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, Kazuo Ishizuka

  KEYWORDS: STEM Moiré, SiGe, Scanning Transmission Electron Microscopy

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.6 No.7, July 4, 2018

  ABSTRACT: A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.