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Gong, H., Wang, Y. and Luo, Y. (2000) Nanocrystalline p-Type Transparent Cu-Al-O Semiconductor Prepared by Chemical-Vapor Deposition with Cu(acac)2 and Al(acac)3 Precursors. Applied Physics Letters, 76, 3959-3961.
https://doi.org/10.1063/1.126834

has been cited by the following article:

• TITLE: Effect of Annealing Temperature and Atmosphere to Surface Solid Phase Reaction of Sapphire Substrates and Spin-Coated Copper Nitrate Gel Films

  AUTHORS: Takashi Ehara

  KEYWORDS: Solid-Phase Reaction, Sapphire Substrate, CuAlO2, CuO, X-Ray Dif-fraction, X-Ray Photoelectron Spectroscopy

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.6 No.5, May 25, 2018

  ABSTRACT: The solid-phase reaction of sapphire (Al2O3) substrates and spin-coated copper nitrate films was studied. X-ray diffraction analysis revealed that a CuO fraction was observed by annealing at temperatures higher than 800℃. In addition, crystalline CuAlO2 was formed at annealing temperatures in the range of 900℃ – 1000℃ by solid-phase reaction of the spin-coated films and sapphire substrate. Crystalline CuAlO2 was formed by annealing at 1000℃ for 5 - 10 h, and CuAl2O4 was formed by annealing at 1000℃ for 15 h. When annealing under N2 flow, Cu2O was observed rather than CuAlO2. For a sample annealed in air at 1000℃ for 5 h, X-ray photoelectron spectroscopy measurements at various depths from surface revealed that Cu2+ ions are located around the surface, which suggests that the CuO fraction is present near the surface while the CuAlO2 fraction is located at greater depths from the surface of the samples. The depth profile of the sample suggests that there is no pure CuAlO2 layer in the sample, but that crystalline CuAlO2 is present in the sample as a mixture with CuO and Al2O3.