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Zhang, J., Ba, W.-Z., Chen, Z.-Y., Cong, X.-Y., Tao, M.-D. and Bakhadyr-khanov, M.K. (2014) Highly Compensated Si: Light Sensitive Characteristic. Journal of Electronic Components & Materials, 23, 20-23.

has been cited by the following article:

• TITLE: Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

  AUTHORS: M. K. Bakhadyrhanov, U. X. Sodikov, D. Melibayev, Tuerdi Wumaier, S. V. Koveshnikov, K. A. Khodjanepesov, Jiangxiang Zhan

  KEYWORDS: Silicon, Spectral Range, Elementary Cell, Binary Nanocluster, Quantum Dots, Photovoltaic Cell, Multicascade PV Cell, Spectral Sensitivity, IR Irradiation, Magnetic Properties, Photoconductivity, Nanoscale

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.6 No.4, April 30, 2018

  ABSTRACT: The paper presents unique functional capabilities of silicon with nanoclusters of impurity atoms with various characters. It is shown that, depending on the nature of the clusters, it is possible to expand the spectral diapason of sensitivity towards the IR region and obtain silicon with anomalously high negative mag-netoresistance (Δρ/ρ > 100%) at room temperature. The formation of clusters of impurity atoms with different nature and concentration in the lattice of semiconductor materials is a new approach for obtaining bulk-nanostructured silicon with unique physical properties.