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Chen, M. and Porod, W. (1995) Design of Gate-Confined Quantum-Dot Structures in the Few-Electron Regime. Journal of Applied Physics, 78, 1050.
https://doi.org/10.1063/1.360339

has been cited by the following article:

• TITLE: Thin Film Evolution Equation for a Strained Anisotropic Solid Film on a Deformable Isotropic Substrate

  AUTHORS: Wondimu Tekalign, Agegnehu Atena

  KEYWORDS: Thin Films, Evolution Equation, Anisotropy, Hooke’s Law

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.6 No.4, April 26, 2018

  ABSTRACT: We consider a continuum model for the evolution of an epitaxially-strained dislocation-free anisotropic thin solid film on isotropic deformable substrate in the absence of vapor deposition. By using a thin film approximation we derived a nonlinear evolution equation. We examined the nonlinear evolution equation and found that there is a critical film thickness below which every film thickness is stable and a critical wave number above which every film thickness is stable.