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Meyer, J.R., Felix, C.L., Bewley, W.W., Vurgaftman, I., Aifer, E.H., Olafsen, L.J., Lindle, J.R., Hoffman, C.A., Yang, M.-J., Bennett, B.R., Shanabrook, B.V., Lee, H., Lin, C.-H., Pei, S.S. and Miles, R.H. (1998) Auger Coefficients in Type-II InAs/Ga1-xInxSb Quantum Wells. Applied Physics Letters, 73, 2857.
https://doi.org/10.1063/1.122609
has been cited by the following article:
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TITLE:
Study on the Theoretical Limitation of the Mid-Infrared PbSe N+-P Junction Detectors at High Operating Temperature
AUTHORS:
Xinghua Shi, Quang Phan, Binbin Weng, Lance L. McDowell, Jijun Qiu, Zhihua Cai, Zhisheng Shi
KEYWORDS:
PbSe, Lifetime, R0A, Detectivity
JOURNAL NAME:
Detection,
Vol.6 No.1,
January
31,
2018
ABSTRACT: This paper provides a theoretical study and calculation of the specific detectivity-D* limit of photovoltaic (PV) mid-wave infrared (MWIR) PbSe n+-p junction detectors operating at both room temperature and TE-cooled temperature. For a typical PbSe p-type doping concentration of 2 × 1017 cm-3 and with high quantum efficiency, the D* limits of a photovoltaic PbSe n+-p junction detector are shown to be 2.8 × 1010 HZ1/2/W and 3.7 × 1010 HZ1/2/W at 300 K and 240 K, with cut-off wavelength of 4.5 μm and 5.0 μm, respectively. It is almost one magnitude higher than the current practical MWIR PV detector. Above 244 K, the detector is Johnson noise limited, and below 191 K the detector reaches background limited infrared photodetector (BLIP) D*. With optimization of carrier concentration, D* and BLIP temperature could be further increased.