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Lemme, M.C., Koppens, F.H.L., Falk, A.L., Rudner, M.S., Park, H., Levitov, L.S. and Marcus, C.M. (2011) Gate-Activated Photoresponse in a Graphene p-n Junction. Nano Letters, 11, 4134-4137.
https://doi.org/10.1021/nl2019068

has been cited by the following article:

• TITLE: Study on Graphene Based Next Generation Flexible Photodetector for Optical Communication

  AUTHORS: Kanishka Majumder, Devesh Barshilia, Subimal Majee

  KEYWORDS: Graphene, Photodetector, Flexible Electronics

  JOURNAL NAME: Graphene, Vol.7 No.2, April 16, 2018

  ABSTRACT: We report on the efficient photodetection (PD) properties of graphene based p-i-n photodetector, where all the three layers are either single or multilayer graphene sheets. We report the bandwidth and responsivity performance of the device. This simple structure paves the way for the next generation flexible wireless communication systems. A theoretical model is used to study the carrier distribution and current in a graphene based p-i-n photodetector system.