Bykhovski, A.D., Kaminski, V.V., Shur, M.S., Chen, Q.C. and Khan, M.A. (1996) Piezoelectric effect in wurtzite n type GaN. Applied Physical Letters, 68, 818. doi:10.1063/1.116543
has been cited by the following article:
TITLE: Effect of dislocation scattering on electron mobility in GaN
AUTHORS: R. Karthik, Uma Sathyakam P., P. S. Mallick
KEYWORDS: Dislocation Scattering; Electron Mobility; Galium Nitride; Scattering
JOURNAL NAME: Natural Science, Vol.3 No.9, September 30, 2011
ABSTRACT: This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other available experimental and theoretical results.