Article citationsMore>>

Weimann, N.G., Eastman, L.F., Doppalapudi, D., Ng, H.M. and Moustakas, T.D. (1998) Scattering of electrons at threading dislocations in GaN. J. Appl. Phys. 83, 3656. doi:10.1063/1.366585

has been cited by the following article:

• TITLE: Effect of dislocation scattering on electron mobility in GaN

  AUTHORS: R. Karthik, Uma Sathyakam P., P. S. Mallick

  KEYWORDS: Dislocation Scattering; Electron Mobility; Galium Nitride; Scattering

  JOURNAL NAME: Natural Science, Vol.3 No.9, September 30, 2011

  ABSTRACT: This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other available experimental and theoretical results.