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Nishimura, T., Lee, C.H., Tabata, T., Wang, S.K., Nagashio, K., Kita, K. and Toriumi, A. (2011) High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3. Applied Physics Express, 4, 064201.
https://doi.org/10.1143/APEX.4.064201

has been cited by the following article:

• TITLE: The Larger Grain and (111)-Orientation Planes of Poly-Ge Thin Film Grown on SiO2 Substrate by Al-Induced Crystallization

  AUTHORS: Shaoguang Dong, Junhuo Zhuang, Yaguang Zeng

  KEYWORDS: Al-Induced Crystallization, Poly-Ge Thin Film, Diffusion Control Interlayer, Lower Annealing Temperature

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.6 No.2, February 13, 2018

  ABSTRACT: Al-induced crystallization yields the larger grain and (111)-orientation planes of poly-Ge thin film grown on SiO2 substrate, the (111)-orientation planes of poly-Ge thin film grown on SiO2 substrate are very important for the superior performance electronics and solar cells. We discussed the 50 nm thickness poly-Ge thin film grown on SiO2 substrate by Alinduced crystallization focusing on the lower annealing temperature and the diffusion control interlayer between Ge and Al thin film. The (111)-orientation planes ratio of poly-Ge thin film achieve as high as 90% by merging the lower annealing temperature (325℃) and the GeOx diffusion control interlayer. Moreover, we find the lack of defects on poly-Ge thin film surface and the larger average grains size of poly-Ge thin film over 12 μm were demonstrated by electron backscatter diffraction measurement. Our results turn on the feasibility of fabricating electronic and optical device with poly-Ge thin film grown on SiO2 substrate.