TITLE:
Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State
AUTHORS:
Ousmane Diasse, Amadou Diao, Mamadou Wade, Marcel Sitor Diouf, Ibrahima Diatta, Richard Mane, Youssou Traore, Gregoire Sissoko
KEYWORDS:
Silicon Solar Cell, Surface Recombination Velocity, Thickness
JOURNAL NAME:
Journal of Modern Physics,
Vol.9 No.2,
January
22,
2018
ABSTRACT: In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe, Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier’s density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.