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Hara, A., Takeuchi, F. and Sasaki, N. (2002) Mobility Enhancement Limit of Excimer-Laser-Crystallized Polycrystalline Silicon Thin Film Transistors. Journal of Applied Physics, 91, 708-714. https://doi.org/10.1063/1.1420766

has been cited by the following article:

• TITLE: Formation of Poly-Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films

  AUTHORS: Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kazuki Kamimura, Toshiyuki Takamatsu

  KEYWORDS: Microwave Plasma Heating, Poly-Si, Thin Film Transistor

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.6 No.1, January 5, 2018

  ABSTRACT: We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 5 sccm. We confirmed that the temperatures of tungsten films increased to above 1000?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of tungsten films deposited on amorphous silicon films on glass substrates and formed polycrystalline silicon films. To utilize this method, we can perform the crystalline process only on device regions. TFTs were fabricated on the polycrystalline silicon films and the electron mobilities of 60 cm2/Vs were obtained.