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Feng, Q., Xiang, J.Z., Kong, J.C., Yu, L.J., Kong, L.D., Wang, G.H., Li, X.J., Yang, L.L., Li, C. and Ji, R.B. (2011) Journal of Semiconductors, 32, 0330041-0330045.

has been cited by the following article:

• TITLE: Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects

  AUTHORS: Amadou Diao, Mamadou Wade, Moustapha Thiame, Grégoire Sissoko

  KEYWORDS: Bifacial Solar Cell, Photoconductivity, Junction Recombination Velocity, Magnetic Field, Electrical Capacitance

  JOURNAL NAME: Journal of Modern Physics, Vol.8 No.14, December 20, 2017

  ABSTRACT: The paper reported a theoretical study on the photoconductivity of a bifacial silicon solar cell under polychromatic illumination and a constant magnetic field effect. By use of the continuity equation in the base of the solar cell maintained in a constant temperature at 300 K, an expression of the excess minority carriers’ density was determined according to the applied magnetic field, the base depth and the junction recombination velocity. From the expression of the minority carriers’ density, the photoconductivity of the solar cell was deduced and which allowed us to predict some recombination phenomena, the use of such solar cell in optoelectronics. The profile of the photoconductivity also permitted us to utilize a linear model in order to determine an electrical capacitance that varied with magnetic field.