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Zhang, H., Liu, L., Gao, B., Qiu, Y., Liu, X., Lu, J., Han, R., Kang, J. and Yu, B. (2011) Gd-Doping Effect on Performance of HfO2 Based Resistive Switching Memory Devices Using Implantation Approach. Applied Physics Letters, 98, 42103-42105.
https://doi.org/10.1063/1.3543837

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