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X. R. Qin, B. S. Swartzentruber and M. G. Lagally, “Scanning Tunneling Microscopy Identification of Atomic-Scale Inter-mixing on Si(100) at Submonolayer Ge Coverages,” Physical Review Letters, Vol. 84, No. 20, 2000, pp. 4645-4648. doi:10.1103/PhysRevLett.84.4645

has been cited by the following article:

• TITLE: Thermodynamic Properties of Semiconductors with Defects

  AUTHORS: Vu Van Hung, Le Dai Thanh

  KEYWORDS: Anharmonic Defective Semiconductor, Statistical Moment Method

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.9, September 20, 2011

  ABSTRACT: Thermodynamic properties of diamond cubic and zinc-blende semiconductors with point defects are considered by the statistical moment method (SMM). The thermal expansion coefficient, the specific heats at constant volume and those at constant pressure, CV and CP, and the isothermal compressibility are derived analytically for semiconductors with defects. The SMM calculated thermodynamic quantities of the Si, and GaAs semiconductors with defects are in good agreement with the experimental results.