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Fackenthal, R., Kitagawa, M., Otsuka, W., Prall, K., Mills, D., Tsutsui, K., Javanifard, J., Tedrow, K., Tsushima, T., Shibahara, Y., et al. (2014) 19.7 A 16Gb ReRAM with 200MB/s Write and 1GB/s Read in 27 nm Technology. 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), San Francisco, CA, 9-13 February 2014, 338-339.
https://doi.org/10.1109/ISSCC.2014.6757460

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