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Wu, Z., Tu, J., Tian, Y., Guo, J. and Zhao, Y. (2017) Time Domain Analysis of Hole Trapping Effect in Avalanche Photodiode Using Schrödinger’s Equation. IEEE Electron Device Letters, 38, 493-496.

has been cited by the following article:

• TITLE: A Double Heterostructure Multiplication Region in AlGaN Based SAGCM Avalanche Photodiode

  AUTHORS: Maryam Bagheriyeh-Behbahani, Mohammad Soroosh, Ebrahim Farshidi

  KEYWORDS: AlGaN, Avalanche Photodiode, Excess Noise, Monte Carlo Simulation

  JOURNAL NAME: Optics and Photonics Journal, Vol.7 No.10, October 18, 2017

  ABSTRACT: In this study, separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with double heterojunction AlN/AlxGa1-xN/GaN in multiplication region were designed to reduce excess noise using Monte Carlo simulation. The multiplication region was broken to three different regions and tried to enhance localization of the first and second impact ionization events at near the heterojunctions. The excess noise of the proposed structure, for high gains, was 64% smaller than that of the fabricated standard AlGaN-APDs.