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Wei, S.-H., Zhang, S.B. and Zunger, A. (1998) Effects of Ga Addition to CuInSe₂ on Its Electronic, Structural, and Defect Properties. Applied Physics Letters, 72, 3199.
https://doi.org/10.1063/1.121548

has been cited by the following article:

• TITLE: Numerical Modeling and Simulation of CIGS-Based Solar Cells with ZnS Buffer Layer

  AUTHORS: Adama Sylla, Siaka Touré, Jean-Pierre Vilcot

  KEYWORDS: Cu(In1-xGax)Se2, Thin-Film Solar Cell, Numerical Modeling, AFORS-HET Simulation, Optimization

  JOURNAL NAME: Open Journal of Modelling and Simulation, Vol.5 No.4, October 16, 2017

  ABSTRACT: Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se2(CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our work focuses on this type of CIGS-based solar cells where CdS is replaced by a ZnS buffer layer. In this contribution, AFORS-HET software is used to simulate n-ZnO: Al/i-ZnO/n-ZnS/p-CIGS/Mo polycrystalline thin-film solar cell where the key parts are p-CIGS absorber layer and n-ZnS buffer layer. The characteristics of these key parts: thickness and Ga-content of the absorber layer, thickness of the buffer layer and doping concentrations of absorber and buffer layers have been investigated to optimize the conversion efficiency. We find a maximum conversion efficiency of 26% with a short-circuit current of 36.9 mA/cm2, an open circuit voltage of 824 mV, and a fill factor of 85.5%.