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A. El-Korashy, et al. “Optical, Electrical and the Related Parameters of Amorphous Ge-Bi-Se Thin Films,” Physica B, Vol. 365, 2005, pp. 55-64.

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• TITLE: Synthesis and Characterization of Sb65Se35-xGex Alloys

  AUTHORS: Saleh Ahmed Saleh

  KEYWORDS: Ge Doping, Sb2Se, Structure, Raman Spectroscopy, Chalcogenides

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.7, July 29, 2011

  ABSTRACT: Density, chemical, structural and vibrational studies of Sb65Se35-xGex system with 0 ≤ x ≤ 20 produce by melt-quench technique were carried out using Archimedes method, Energy Dispersive Spectroscopy (EDS), X-ray diffraction (XRD) and Raman spectroscopy. All specimens are polycrystalline in nature as confirmed by XRD pattern. The compositional dependence of the XRD and Raman spectra suggests the presence of two basic structural units, SbSe3 pyramids with three-fold coordinated Sb atom at the apex and GeSe4 tetrahedrons. The compositional dependence of these physic Chemical properties of the investigated samples are investigated and discussed in light of many models. PACS: 68.55. Ln; 61.50. Ks; 68.55.Jk