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Dagens, B., Martinez, A., Provost, J.-G., Make, D., Le Gouezigou, O., Ferlazzo, L., Merghem, K., Lema ître, A., Ramdane, A. and Thedrez, B. (2006) High Extinction Ratio and High-Temperature 2.5-Gb/s Floor-Free 1.3 μm Transmission with a Directly Modulated Quantum Dot Laser. IEEE Photonics Technology Letters, 18, 589-591.
https://doi.org/10.1109/LPT.2006.870189

has been cited by the following article:

• TITLE: Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

  AUTHORS: Neslihan Ayarcı Kuruoğlu, Orhan Özdemir, Kutsal Bozkurt

  KEYWORDS: Long Wavelength Laser Diode, Quantum Dots, Quantum Dashes, Electroluminescence, Temperature Dependent Currentdensity-Voltage Characteristics

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.9, August 22, 2017

  ABSTRACT: Charge transfer characteristics of the long wavelength semiconductor laser structures, containing quantum dot layers (QDs), were investigated by means of temperature dependent current-voltage and electroluminescence measurements over InAs/InP, and InAs/GaAs based p-i-n structures. In InAs/InP elongated QDs (QDashes) structure, injected carriers were tunneled from the quantum well into QDashes through a thin barrier and subsequently recombined within QDashes. Meanwhile, for InAs/GaAs structure, tunneling kind transport was exhibited in both forward and reverse bias voltage directions. The onset of light took place when the forward bias exceeded 1.3 V (3 V) for InAs/InP (InAs/GaAs) p-i-n structure through electroluminescence measurements. The peak value of emitted laser light for InAs/InP QDashes and InAs/GaAs QDs occurred in 1.55 μm and 1.3 μm, respectively.