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V. Sverdlov, “Scaling, Power Consumption, and Mobility Enhancement Techniques,” In: S. Selberherr, Ed., Strain Induced Effects in Advanced MOSFET, Computational Microelectronics, 2011, pp. 5-22.

has been cited by the following article:

• TITLE: Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

  AUTHORS: Viranjay M. Srivastava, K. S. Yadav, G. Singh

  KEYWORDS: Capacitance-Frequency Curve, Capacitance-Voltage Curve, DP4T Switch, LCR Meter, MOS Device, Radio Frequency, RF Switch, Testing, VEE Pro, VLSI

  JOURNAL NAME: International Journal of Communications, Network and System Sciences, Vol.4 No.9, September 20, 2011

  ABSTRACT: To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.