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R. Chowdhury, P. Rees, S. Adhikari, F. Scarpa and S. P. Wilks, “Electronic Structures of Silicon Doped ZnO,” Physica B, Vol. 405, No. 8, April 2010, pp. 1980-1985. doi:10.1016/j.physb.2010.01.084

has been cited by the following article:

• TITLE: Effect of Calcinations Temperature on Crystallography and Nanoparticles in ZnO Disk

  AUTHORS: Urai Seetawan, Suwit Jugsujinda, Tosawat Seetawan, Ackradate Ratchasin, Chanipat Euvananont, Chabaipon Junin, Chanchana Thanachayanont, Prasarn Chainaronk

  KEYWORDS: Nanoparticles in ZnO Disk, Calcinations Temperature, Crystallography of ZnO

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.9, September 20, 2011

  ABSTRACT: We proposed a good calcinations condition of the ZnO disk to control the crystallography and nanoparticles in ZnO disk. The crystallography of precursor powder and disk powder were analyzed by the X-ray diffraction (XRD). The mean nanoparticles of ZnO disk was determinate by XRD results and observed by scanning electron microscope. The temperature ranges of 400℃ to 650℃ in air for 30 minutes were used calcinations ZnO disk. These temperature can be controlled the single phase, lattice parameters, unit cell volume, crystalline size, d-value, texture coefficient and bond lengths of Zn–Zn, Zn–O and O–O which correspond significantly the hexagonal crystal structure. The nanoparticles were small changed mean of 76.59 nm at the calcinations temperature range.