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S. A. Sakwe, R. Müller and P. J. Wellmann, “Optimization of KOH Etching Parameters for Quantitative Defect Recognition in n- and p-Type Doped SiC,” Journal of Crystal Growth, Vol. 289, No. 2, April 2006, pp. 520-526. doi:10.1016/j.jcrysgro.2005.11.096

has been cited by the following article:

• TITLE: Influence of Defects on Low Temperature Diffusion of Boron in SiC

  AUTHORS: Ilkham G. Atabaev, Tojiddin M. Saliev, Dilmurad Saidov, Vadim A. Pak, Khimmatali Juraev, Chin-Che Tin, Bakhtiyar G. Atabaev, Vyacheslav N. Giryansky

  KEYWORDS: Diffusion, Activation Energy, Silicone Carbide, Annealing, Vacancy

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.9, September 20, 2011

  ABSTRACT: The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of defects on quality of prepared p-n junctions are presented.