TITLE:
Influence of Defects on Low Temperature Diffusion of Boron in SiC
AUTHORS:
Ilkham G. Atabaev, Tojiddin M. Saliev, Dilmurad Saidov, Vadim A. Pak, Khimmatali Juraev, Chin-Che Tin, Bakhtiyar G. Atabaev, Vyacheslav N. Giryansky
KEYWORDS:
Diffusion, Activation Energy, Silicone Carbide, Annealing, Vacancy
JOURNAL NAME:
Materials Sciences and Applications,
Vol.2 No.9,
September
20,
2011
ABSTRACT: The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of defects on quality of prepared p-n junctions are presented.