TITLE:
Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon
AUTHORS:
Larbi F., Belfedal Abdelkader, Sib J. D., Bouizem Y., Chahed L., Amaral A.
KEYWORDS:
Defects Formation, Doping, Microcrystalline Silicon, Thermodynamic Model of Defect, Optical Properties and Measurements
JOURNAL NAME:
Journal of Modern Physics,
Vol.2 No.9,
September
19,
2011
ABSTRACT: Gap states in amorphous hydrogenated silicon (a-Si:H) doped and microcrystalline silicon doped n and p were examined by analysis of subgap absorption spectra obtained by the Constant Photocurrent Method (CPM) and the Photothermal Deflection Spectroscopy (PDS). Assuming a Gaussian distribution of defect states in the gap, broad distribution of states was found in a-Si:H and doped a-Si:H. A dependence of the defect concentration on Fermi energy was detected and analysed by thermodynamic model of defect formation in a-Si:H.