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M. J. Powell and S. C. Deane, “Improved Defect-Pool Model for Charged Defects in Amorphous Silicon,” Physical Review B, Vol. 48, No. 15, 1993, pp. 10815- 10827. doi:10.1103/PhysRevB.48.10815

has been cited by the following article:

• TITLE: Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon

  AUTHORS: Larbi F., Belfedal Abdelkader, Sib J. D., Bouizem Y., Chahed L., Amaral A.

  KEYWORDS: Defects Formation, Doping, Microcrystalline Silicon, Thermodynamic Model of Defect, Optical Properties and Measurements

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.9, September 19, 2011

  ABSTRACT: Gap states in amorphous hydrogenated silicon (a-Si:H) doped and microcrystalline silicon doped n and p were examined by analysis of subgap absorption spectra obtained by the Constant Photocurrent Method (CPM) and the Photothermal Deflection Spectroscopy (PDS). Assuming a Gaussian distribution of defect states in the gap, broad distribution of states was found in a-Si:H and doped a-Si:H. A dependence of the defect concentration on Fermi energy was detected and analysed by thermodynamic model of defect formation in a-Si:H.