Article citationsMore>>

H. Van Cong, “Bandgap Changes in Excited Intrinsic (Heavily Doped) Si and Ge,” Physica B, Vol. 405, No. 4, 2010, pp. 1139-1149. doi:10.1016/j.physb.2009.11.016

has been cited by the following article:

SCIRP Newsletter
Copyright © 2006-2026 Scientific Research Publishing Inc. All Rights Reserved.
Top