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Meng, J.F., Chandra Shekar, N.V., Badding, J.V. and Nolas, G.S. (2001) Threefold Enhancement of the Thermoelectric Figure of Merit for Pressure Tuned Sr8Ga16Ge30. Journal of Applied Physics, 89.

has been cited by the following article:

• TITLE: Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) Thermoelectric Devices

  AUTHORS: Ibrahim M. Abdel-Motaleb, Syed M. Qadri

  KEYWORDS: Thermoelectric Devices, Bismuth Telluride, Bi2Te3, Antimony Telluride, Sb2Te3, Pulsed Laser Deposition, PLD, Seebeck Effect

  JOURNAL NAME: Journal of Electronics Cooling and Thermal Control, Vol.7 No.3, July 21, 2017

  ABSTRACT: We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.