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Littleton IV, R.T., Tritt, T.M., Korzenski, M., Ketchum, D. and Kolis, J.W. (2001) Effect of Sb Substitution on the Thermoelectric Properties of the Group IV Pentatelluride Materials M1xYxTe5 (M1/4Hf, Zr and Ti). Physical Review B, 64, 121104-121107.

has been cited by the following article:

• TITLE: Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) Thermoelectric Devices

  AUTHORS: Ibrahim M. Abdel-Motaleb, Syed M. Qadri

  KEYWORDS: Thermoelectric Devices, Bismuth Telluride, Bi2Te3, Antimony Telluride, Sb2Te3, Pulsed Laser Deposition, PLD, Seebeck Effect

  JOURNAL NAME: Journal of Electronics Cooling and Thermal Control, Vol.7 No.3, July 21, 2017

  ABSTRACT: We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.