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V. Podzorov, M. E. Gershenson, C. Kloc, R. Zeis and E. Bucher, “High-mobility Field-effect Transistors Based on Transition Metal Dichalcogenides,” Applied Physics Letters, Vol. 84, No. 17, April 2004, pp. 3301-3303. Doi.10.1063/1.1723695

has been cited by the following article:

• TITLE: Schottky Barriers on Layered Anisotropic Semiconductor – WSe2 – with 1000 Å Indium Metal Thickness

  AUTHORS: Achamma John Mathai, Chalappally Kesav Sumesh, Bharat Purushotamds Modi

  KEYWORDS: Schottky Diodes, Interface, Inhomogeneities, In-Pwse2, Metal Thickness, Current-Voltage, Thermionic Emission, Generation Recombination, Tunneling, Gaussian Distribution.

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.8, August 9, 2011

  ABSTRACT: We have studied the forward I-V characteristics of In-pWSe2Schottky barrier diode with 1000 Å indium thickness in the temperature range 140 – 300 K well within the domain of thermionic emission theory with Gaussian distribution of barrier height. However we found some anomalies in the low temperature range below 200 K. Hence we have considered a model that incorporates thermionic emission, generation recombination and tunneling components. The low temperature anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the fabricated diodes. Various Schottky diode parameters were also extracted and compared with that of 500 Å metal thickness In-pWSe2 diode.