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Pearton, S.J., Abernathy, C.R., Thaler, G.T., Frazier, R.M., Norton, D.P., Ren, F., Park, Y.D., Zavada, J.M., Buyanova, I.A., Chen, W.M. and Hebard, A.F. (2004) Wide Bandgap GaN-Based Semiconductors for Spintronics. Journal of Physics: Condensed Matter, 16, R209-R245.
https://doi.org/10.1088/0953-8984/16/7/r03

has been cited by the following article:

• TITLE: ZnO Films Deposited on Porous Silicon by DC Sputtering

  AUTHORS: Masato Ohmukai, Takuya Nakagawa, Ayumu Matsumoto

  KEYWORDS: ZnO Film, DC Sputtering, Annealing, X-Ray Diffraction Analysis, Porous Silicon

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.6, June 12, 2017

  ABSTRACT: ZnO is now a fascinating semiconductor oxide material for light emission or transparent electronic conductors. We deposited ZnO films on porous silicon, which is known as a light emitting material based on silicon, by means of a direct current sputtering technique. The deposition was performed at room temperature, and the samples were annealed afterwards to improve the ZnO crystalline quality. The discussion to compare our results with that formed on Si wafer, reveals that the ZnO on porous silicon has the better crystalline quality in the scope of an X-ray diffraction measurement.