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C. M. Fang, R. A. de Groot, R. J. Bruls, H. T. Hintzen and G de With, “Ab Initio Band Structure Calculations of Mg3N2 and MgSiN2,” Journal Physical: Condenser Matterial, Vol. 11, No. 25, 1999, pp. 4833-4842. doi:10.1088/0953-8984/11/25/304

has been cited by the following article:

• TITLE: Structural and Electronic Properties of Impurities on Boron Nitride Nanotube

  AUTHORS: Gabrielle P. Soares, Silvete Guerini

  KEYWORDS: BN Nanotube, DFT, Electronic Properties

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.8, August 12, 2011

  ABSTRACT: The structural and electronic properties of molybdenum and magnesium substitution doping in (10,0) boron nitride nanotube (BNNT), are investigated through first-principle calculations. The electronic band structures results indicate that the molybdenum doped systems behave as n-type impurity. However, the magnesium doped systems behave as p-type impurity when magnesium replaces boron, and as a n-type impurity when the magnesium replaces nitrogen. The analysis of the energies formation shows that the molybdenum replacing a boron and nitrogen atoms are more favorable than the magnesium substitution in boron and nitrogen.