TITLE:
A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN
AUTHORS:
Reza Karami, Masoud Sabaghi, Massoud Masoumi
KEYWORDS:
Mole Fraction, GaN/InAlGaN, Breakdown Voltage, High Electron Mobility Transistor (HEMT)
JOURNAL NAME:
World Journal of Engineering and Technology,
Vol.5 No.2,
May
27,
2017
ABSTRACT: The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance; and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.