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Zhang, Y., Sun, M., Joglekar, S.J., Fujishima, T. and Palacios, T. (2013) Threshold Voltage Control by Gate Oxide Thickness in Fluorinated GaN Metal-Oxide-Semi-conductor High-Electron-Mobility Transistors. Applied Physics Letters, 103, Article: 082917.

has been cited by the following article:

• TITLE: A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN

  AUTHORS: Reza Karami, Masoud Sabaghi, Massoud Masoumi

  KEYWORDS: Mole Fraction, GaN/InAlGaN, Breakdown Voltage, High Electron Mobility Transistor (HEMT)

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.5 No.2, May 27, 2017

  ABSTRACT: The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance; and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.