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Luong, T.K.P., et al. (2013) Control of Tensile Strain and Interdiffusion in Ge/Si (001) Epilayers Grown by Molecular-Beam Epitaxy. Journal of Applied Physics, 114, Article ID: 083504.
https://doi.org/10.1063/1.4818945

has been cited by the following article:

• TITLE: RETRACTED: Phosphorus Dopant Distribution in Highly N-Doped Ge Film on Si(001) Substrate Using Specific GaP Solid Source

  AUTHORS: Luong Thi Kim Phuong

  KEYWORDS: Heavy N-Doping, Germanium, Dopant Distribution, GaP Source, Optoelectronic Application

  JOURNAL NAME: Optics and Photonics Journal, Vol.7 No.5, May 25, 2017

  ABSTRACT: Short Retraction Notice This article has been retracted to straighten the academic record. In making this decision the Editorial Board follows COPE's Retraction Guidelines. The aim is to promote the circulation of scientific research by offering an ideal research publication platform with due consideration of internationally accepted standards on publication ethics. The Editorial Board would like to extend its sincere apologies for any inconvenience this retraction may have caused. Please see the article page for more details. The full retraction notice in PDF is preceding the original paper which is marked "RETRACTED".