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Yang, K.N., Huang, H.T., Member, S., Chen, M.J., Member, S., Lin, Y.M. and Liang, M.S. (2001) Characterization and Modeling of Edge Direct Tunneling (EDT) Leakage in Ultrathin Gate Oxide MOSFETs. IEEE Transactions on Electron Devices, 48, 1159-1164.
https://doi.org/10.1109/16.925242

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