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Yang, N., Henson, W.K., Wortman, J.J. and Member, S. (2000) A Comparative Study of Gate Direct Tunneling and Drain Leakage Currents in N-MOSFET’s with Sub-2-nm Gate Oxides. IEEE Transactions on Electron Devices, 47, 1636-1644.
https://doi.org/10.1109/16.853042

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