Article citationsMore>>

Yuan, X., Park, J.E., Wang, J., Zhao, E., Ahlgren, D.C., Hook, T., et al. (2008) Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology. IEEE Transactions on Device and Materials Reliability, 8, 501-508.
https://doi.org/10.1109/TDMR.2008.2002350

has been cited by the following article: