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Wolkin, M.V., Jorne, J., Fauchet, P.M., Allan, G. and Delerue, C. (1999) Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen. Physical Review Letters, 82, 197.
https://doi.org/10.1103/PhysRevLett.82.197

has been cited by the following article:

• TITLE: Nanometer Thick Diffused Hafnium and Titanium Oxide Light Sensing Film Structures

  AUTHORS: Fred J. Cadieu, Lev Murokh

  KEYWORDS: Thin Film, Light Sensing, Current Enhancement, Interface States, Hafnium, Titanium

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.7 No.1, February 28, 2017

  ABSTRACT: We examine 10 nm thick film structures containing either Hf or Ti sandwiched between two respective oxide layers. The layers are deposited onto heated substrates to create a diffusion region. We observe a high degree of light sensitivity of the electric current through the film thickness for one polarity of an applied voltage. For the other polarity, the current is not affected by the light. We explain the observed phenomenology using the single-particle model based on the existence of interface states on the metal-oxide interfaces.