TITLE:
STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon
AUTHORS:
Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa
KEYWORDS:
STEM Moiré, Lattice Strain, Ge on Si, Plasma Heating
JOURNAL NAME:
Journal of Materials Science and Chemical Engineering,
Vol.5 No.1,
January
16,
2017
ABSTRACT: We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.