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Kim, S., Kondo, Y., Lee, K., Byun, G., Kim, J.J., Lee, S. and Lee, K. (2013) Quantitative Measurement of Strain Field in Strained-Channel-Transistor Arrays by Scanning Moiré Fringe Imaging. Appl. Phys. Lett., 103, Article ID: 033523. https://doi.org/10.1063/1.4816286

has been cited by the following article:

• TITLE: STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon

  AUTHORS: Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa

  KEYWORDS: STEM Moiré, Lattice Strain, Ge on Si, Plasma Heating

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 16, 2017

  ABSTRACT: We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.